MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has introduced a new 40 V TrenchFET® Gen V n-channel power MOSFET, designed to deliver superior efficiency and power density for industrial applications. The SiJK140E, packaged in Vishay’s PowerPAK® 10×12 format, offers industry-leading on-resistance, cutting power losses and enhancing performance in compact designs.
The SiJK140E reduces on-resistance by 32% compared to competing devices of the same footprint and offers 58% lower resistance than traditional 40 V MOSFETs in the TO-263-7L package. With an on-resistance as low as 0.34 mΩ typical at 10 V, the device minimizes power losses, boosts efficiency, and improves thermal performance through a low thermal resistance (RthJC) of 0.21°C/W.
One key benefit is its ability to replace two parallel MOSFETs with a single device, simplifying designs, improving reliability, and increasing the mean time between failures (MTBF). Additionally, its bond-wireless (BWL) design reduces parasitic inductance and supports a continuous drain current of up to 795 A, far exceeding the 200 A limit of TO-263-7L solutions, allowing for greater power density and robust safe operating area (SOA) capability.
The SiJK140E’s compact design saves 27% board space compared to the TO-263-7L, while its lower vertical profile conserves critical space in industrial systems. It also supports a high threshold voltage of 2.4Vgs to prevent shoot-through, making it a reliable choice for complex circuits.
This MOSFET is well-suited for applications including motor drive controls, power tools, welding and plasma cutting equipment, battery management systems, robotics, and 3D printers. Its bond-wireless package and RoHS-compliant, halogen-free design further enhance its durability and environmental friendliness.
By incorporating innovative features and addressing key challenges in industrial designs, Vishay’s SiJK140E promises to redefine efficiency and reliability in high-performance power applications.
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