MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has introduced a groundbreaking addition to its product lineup with the new 150 V TrenchFET® Gen V n-channel power MOSFET, housed in the PowerPAK® SO-8S (QFN 6×5) package. This latest development significantly enhances performance metrics, offering a leap forward for power conversion applications.
The newly launched SiRS5700DP MOSFET offers a remarkable reduction in overall on-resistance, slashing it by 68.3% compared to its predecessors. It also improves the on-resistance times gate charge—a crucial measure of efficiency in MOSFETs used for power conversion—by 15.4%. Additionally, the device provides a 62.5% lower thermal resistance from junction to case (RthJC) and supports a 179% higher continuous drain current.
Designed with an industry-leading on-resistance of 5.6 mΩ at 10 V and a figure of merit (FOM) of 336 mΩ*nC, the SiRS5700DP minimizes power losses during conduction. This feature is particularly beneficial for designers aiming to enhance efficiency in next-generation power supply systems, such as those required in 6 kW AI server power solutions. The PowerPAK SO-8S package’s low thermal resistance of 0.45 °C/W allows for a continuous drain current of up to 144 A, boosting power density and offering robust Safe Operating Area (SOA) capability.
This power MOSFET is highly suitable for applications such as synchronous rectification, DC/DC converters, hot swap switching, and OR-ing functionality. It is ideal for use in servers, edge computing, supercomputers, and data storage, as well as telecom power supplies, solar inverters, motor drives, and battery management systems. The SiRS5700DP meets RoHS compliance, is halogen-free, and has been rigorously tested for Rg and Unclamped Inductive Switching (UIS), ensuring it meets IPC-9701 criteria for dependable temperature cycling.
Fully compatible with the standard PowerPAK SO-8 package, the SiRS5700DP offers a significant advancement in power management technology, addressing the growing demands for efficiency and power density in complex electronic systems.
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