MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has announced the launch of 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes, designed for high-frequency applications where speed and efficiency are critical. The devices, offered in the industry-standard SOT-227 package, provide an optimal balance between forward voltage drop and capacitive charge, improving overall performance.
The lineup includes dual diode components ranging from 40 A to 240 A in parallel configurations, as well as 50 A and 90 A single-phase bridge devices. Built on advanced thin wafer technology, these diodes feature a low forward voltage drop of 1.36 V, reducing conduction losses and boosting efficiency. They also outperform silicon-based counterparts by offering superior reverse recovery characteristics, with virtually no recovery tail.
Ideal for use in photovoltaic systems, charging stations, industrial UPS, and telecom power supplies, these diodes’ low capacitive charges—down to 56 nC—enable high-speed switching in demanding AC/DC power factor correction (PFC) and DC/DC converter applications. Additionally, their high operating temperature up to +175 °C and positive temperature coefficient simplify parallel operation.
Approved under UL file E78996, these components deliver reliability and durability with features like a large creepage distance between terminals and a simplified mechanical design that streamlines assembly.
By offering high performance and easy integration, Vishay’s new SiC Schottky diodes are set to provide critical benefits for renewable energy and industrial power applications, supporting the push for greater energy efficiency and system reliability.
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