MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has expanded its portfolio with the introduction of the Gen 4.5 650 V E Series power MOSFET. Engineered for efficiency and power density, this latest innovation is aimed at telecom, industrial, and computing applications, addressing demands for enhanced performance in power conversion systems.
The Vishay Siliconix SiHK050N65E delivers a 48.2% reduction in on-resistance compared to prior models, along with a 65.4% lower resistance times gate charge figure of merit (FOM). These improvements significantly reduce energy loss, making the device ideal for high-demand applications such as power factor correction (PFC) and DC/DC converter stages. Capable of supporting systems with power ratings above 6 kW, the MOSFET also aligns with titanium efficiency standards for server power supplies.
With its low typical on-resistance of 0.048 Ω at 10 V and ultra-low gate charge of 78 nC, the SiHK050N65E minimizes conduction and switching losses, ensuring improved energy efficiency. Additional features include a 50 V increase in breakdown voltage, enabling operation with input voltages ranging from 200 VAC to 277 VAC, as well as compatibility with the Open Compute Project’s Open Rack V3 (ORV3) standards.
This innovative MOSFET is designed for a wide range of demanding applications, including servers, edge computing, supercomputers, solar inverters, telecom SMPS, motor drives, and battery chargers. Specific advancements, such as resistance times Co(er) FOM of 8.0 Ω*pF and optimized capacitance values for improved switching performance, make it well-suited to hard-switched topologies.
The SiHK050N65E is housed in a PowerPAK® 10 x 12 package, incorporating a Kelvin connection to reduce gate noise. The device meets RoHS and halogen-free requirements and undergoes 100% UIS testing to ensure rugged durability against overvoltage transients.
Samples and production quantities of the SiHK050N65E are now available, providing cutting-edge solutions for energy-efficient power systems.
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