MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) has expanded its optoelectronics offerings by introducing a new 890 nm high-speed infrared (IR) emitting diode. The device, named TSHF5211, is housed in a clear, untinted leaded plastic package and leverages surface emitter technology.
This new IR emitter boasts a temperature coefficient of VF of -1.0 mV/K, delivering higher radiant intensity and faster response times compared to older models. It achieves a typical radiant intensity of 235 mW/sr at a 100 mA drive current, which is a 50% improvement over previous-generation devices. The diode also features quick switching times of 15 nanoseconds and a low typical forward voltage of 1.5V.
Designed for high-intensity applications, the TSHF5211 has a narrow ±10° angle of half intensity, making it ideal for use in smoke detectors and industrial sensors. It pairs well with silicon photodetectors, ensuring good spectral matching.
The device is RoHS-compliant, halogen-free, and classified as Vishay Green, meaning it is lead-free and can withstand lead-free soldering temperatures up to 260°C. This aligns with modern environmental standards and ensures compatibility with a wide range of applications.
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